Solid phase epitaxial regrowth of amorphous silicon is not affected by structural relaxationROORDA, S; LAVIGUEUR, Y.Philosophical magazine (2003. Print). 2010, Vol 90, Num 29-30, pp 3787-3794, issn 1478-6435, 8 p.Article

Aspects of silicon crystallizationSINKE, W. C; ROORDA, S.Journal of crystal growth. 1990, Vol 99, Num 1-4, pp 222-228, issn 0022-0248, 1Conference Paper

Mesotaxy by nickel diffusion into a buried amorphous silicon layerEROKHIN, Y. N; GRÖTZSCHEL, R; OKTYABRSKY, S. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1992, Vol 12, Num 1-2, pp 103-106Conference Paper

Influence of layer thickness on nucleation in amorphous silicon thin filmsROORDA, S; KAMMANN, D; SINKE, W. C et al.Materials letters (General ed.). 1990, Vol 9, Num 7-8, pp 259-262, issn 0167-577XArticle

Annealing mechanisms of divacancies in siliconPOIRIER, R; AVALOS, V; DANNEFAER, S et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 609-612, issn 0921-4526, 4 p.Conference Paper

Point defect populations in amorphous and crystalline siliconROORDA, S; POATE, J. M; JACOBSON, D. C et al.Solid state communications. 1990, Vol 75, Num 3, pp 197-200, issn 0038-1098, 4 p.Article

Pulsed laser oxidation and nitridation of metal surfaces immersed in liquid media = Nitruration et oxydation par laser pulsé de surfaces métalliques immergées dans un milieu liquideOGALE, S. B; POLMAN, A; QUANTIN, F. O. P et al.Applied physics letters. 1987, Vol 50, Num 3, pp 138-140, issn 0003-6951Article

Elongation of gold nanoparticles by swift heavy ion irradiation: Surface plasmon resonance shift dependence on the electronic stopping powerHARKATI KERBOUA, C; LAMARRE, J.-M; CHICOINE, M et al.Thin solid films. 2013, Vol 527, pp 186-192, issn 0040-6090, 7 p.Article

Dependence of the structural relaxation of amorphous silicon on implantation temperatureMERCURE, J.-F; KARMOUCH, R; ANAHORY, Y et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 13, pp 134208.1-134205.7, issn 1098-0121Article

Optical and microstructural properties of nanocomposite Au/SiO₂ films containing particles deformed by heavy ion irradiationLAMARRE, J.-M; YU, Z; HARKATI, C et al.Thin solid films. 2005, Vol 479, Num 1-2, pp 232-237, issn 0040-6090, 6 p.Article

Calorimetric evidence for structural relaxation in amorphous siliconROORDA, S; DOORN, S; SINKE, W. C et al.Physical review letters. 1989, Vol 62, Num 16, pp 1880-1883, issn 0031-9007Article

Transient structural relaxation of amorphous siliconSINKE, W; WARABISAKO, T; MIYAO, M et al.Journal of non-crystalline solids. 1988, Vol 99, Num 2-3, pp 308-323, issn 0022-3093Article

Order and disorder in edge-supported pure amorphous Si and pure amorphous Si on Si(001)XIE, R; LONG, G. G; WEIGAND, S. J et al.Journal of non-crystalline solids. 2011, Vol 357, Num 14, pp 2498-2501, issn 0022-3093, 4 p.Conference Paper

Role of implantation temperature on residual damage in ion-implanted 6H-SiCHELIOU, R; BREBNER, J. L; ROORDA, S et al.Semiconductor science and technology. 2001, Vol 16, Num 10, pp 836-843, issn 0268-1242Article

Structural defects and hydrogen clustering in amorphous siliconACCO, S; WILLIAMSON, D. L; ROORDA, S et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 128-132, issn 0022-3093, aConference Paper

Density of amorphous Si_xGe_1-x alloys prepared by high-energy ion implantationLAAZIRI, K; ROORDA, S; BARIBEAU, J. M et al.Journal of non-crystalline solids. 1995, Vol 191, Num 1-2, pp 193-199, issn 0022-3093Article

gettering in polycrystalline silicon solar cellsVERHOEF, L. A; MICHIELS, P-P; ROORDA, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1990, Vol 7, Num 1-2, pp 49-62, issn 0921-5107Article

Nitridation of iron by pulsed excimer laser treatment under liquid ammonia: Mössbauer spectroscopic study = Nitruration du fer par traitement au laser excimer pulsé sous ammoniac liquide: étude par spectrométrie MössbauerOGALE, S. B; PATIL, P. P; ROORDA, S et al.Applied physics letters. 1987, Vol 50, Num 25, pp 1802-1804, issn 0003-6951Article

Magnetooptic iron garnet thin films for integrated optical applicationsZAEZJEV, M; CHANDRA SEKHAR, M; FERRERA, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63433W.1-63433W.10, issn 0277-786X, isbn 0-8194-6428-7Conference Paper

Divacancies in proton irradiated silicon: variation of ESR signal with annealing timePOIRIER, R; AVALOS, V; DANNEFAER, S et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 752-755, issn 0921-4526, 4 p.Conference Paper

Radiation damage in silicon studied in situ by nanocalorimetryMERCURE, J.-F; KARMOUCH, R; ANAHORY, Y et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 622-625, issn 0921-4526, 4 p.Conference Paper

MeV Si⁺ irradiation of Ni/Fe multilayers: structural, transport and magnetic propertiesVERES, T; CAI, M; COCHRANE, R. W et al.Thin solid films. 2001, Vol 382, Num 1-2, pp 172-182, issn 0040-6090Article

Defects in amorphous silicon probed by subpicosecond photocarrier dynamicsSTOLK, P. A; CALCAGNILE, L; ROORDA, S et al.Applied physics letters. 1992, Vol 60, Num 14, pp 1688-1690, issn 0003-6951Article

Structural relaxation and defect annihilation in pure amorphous siliconROORDA, S; SINKE, W. C; POATE, J. M et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 8, pp 3702-3725, issn 0163-1829Article

A numerical study of energy transfer mechanisms in materials following irradiation by swift heavy ionsBARIL, P; LEWIS, L. J; ROORDA, S et al.The European physical journal. B, Condensed matter physics (Print). 2009, Vol 71, Num 1, pp 27-35, issn 1434-6028, 9 p.Article